Journal of Modern Physics

Vol.3 No.11(2012), Paper ID 24643, 5 pages

DOI:10.4236/jmp.2012.311220

 

Quantum Conductance Staircase of Edge Hole Channels in Silicon Quantum Wells

 

Nikolay T. Bagraev, Leonid E. Klyachkin, Andrei A. Kudryavtsev, Anna M. Malyarenko

 

Ioffe Physical Technical Institute, St. Petersburg, Russia
Ioffe Physical Technical Institute, St. Petersburg, Russia
Ioffe Physical Technical Institute, St. Petersburg, Russia
Ioffe Physical Technical Institute, St. Petersburg, Russia

 

Copyright © 2012 Nikolay T. Bagraev, Leonid E. Klyachkin, Andrei A. Kudryavtsev, Anna M. Malyarenko et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


N. Bagraev, L. Klyachkin, A. Kudryavtsev and A. Malyarenko, "Quantum Conductance Staircase of Edge Hole Channels in Silicon Quantum Wells," Journal of Modern Physics, Vol. 3 No. 11, 2012, pp. 1771-1775. doi: 10.4236/jmp.2012.311220.

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