Journal of Sensor Technology

Vol.2 No.3(2012), Paper ID 22872, 6 pages

DOI:10.4236/jst.2012.23019

 

Modelling of Thermal Behavior N-Doped Silicon Resistor

 

Fouad Kerrour, Ali Boukabache, Patrick Pons

 

Modeling of Energy Renewable Devices and Nano-Metric Laboratory, University of Mentouri, Constantine, Algeria
Laboratory of Architecture and Systems Analysis, National Centre of Scientific Research, Toulouse, France
Laboratory of Architecture and Systems Analysis, National Centre of Scientific Research, Toulouse, France

 

Copyright © 2012 Fouad Kerrour, Ali Boukabache, Patrick Pons et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


F. Kerrour, A. Boukabache and P. Pons, "Modelling of Thermal Behavior N-Doped Silicon Resistor," Journal of Sensor Technology, Vol. 2 No. 3, 2012, pp. 132-137. doi: 10.4236/jst.2012.23019.

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