Circuits and Systems

Vol.8 No.4(2017), Paper ID 76106, 18 pages

DOI:10.4236/cs.2017.84006

 

28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part I

 

Ali Mohsen, Adnan Harb, Nathalie Deltimple, Abraham Serhane

 

Department of Electrical and Electronics Engineering, Lebanese International University, Beirut, Lebanon
Department of Electrical and Electronics Engineering, Lebanese International University, Beirut, Lebanon
IMS Laboratory, University of Bordeaux, Talence cedex, France
Department of Industrial Engineering, Lebanese International University, Beirut, Lebanon

 

Copyright © 2017 Ali Mohsen, Adnan Harb, Nathalie Deltimple, Abraham Serhane et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


Mohsen, A. , Harb, A. , Deltimple, N. and Serhane, A. (2017) 28-nm UTBB FD-SOI vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part I. Circuits and Systems, 8, 93-110. doi: 10.4236/cs.2017.84006.

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