Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education,
Beijing, China
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education,
Beijing, China
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education,
Beijing, China
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education,
Beijing, China
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education,
Beijing, China
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education,
Beijing, China
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education,
Beijing, China
Copyright © 2016 Yiru Liao, Jianjun Li, Guoxin Mi, Haikuo Wang, Yuancheng Wang, Jun Deng, Jun Han et al. This is
an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any
medium, provided the original work is properly cited.
How to Cite this Article
Liao, Y. , Li, J. , Mi, G. , Wang, H. , Wang, Y. , Deng, J. and Han, J. (2016) An Experimental Study on the Temperature Characteristic of a 940 nm Semiconductor Laser Diode.
Optics and Photonics Journal,
6, 75-82. doi:
10.4236/opj.2016.68B013.