Optics and Photonics Journal

Vol.6 No.8BB(2016), Paper ID 70305, 8 pages

DOI:10.4236/opj.2016.68B013

 

An Experimental Study on the Temperature Characteristic of a 940 nm Semiconductor Laser Diode

 

Yiru Liao, Jianjun Li, Guoxin Mi, Haikuo Wang, Yuancheng Wang, Jun Deng, Jun Han

 

Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education, Beijing, China
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education, Beijing, China
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education, Beijing, China
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education, Beijing, China
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education, Beijing, China
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education, Beijing, China
Key Laboratory of Opto-Electronics Technology, Beijing University of Technology, Ministry of Education, Beijing, China

 

Copyright © 2016 Yiru Liao, Jianjun Li, Guoxin Mi, Haikuo Wang, Yuancheng Wang, Jun Deng, Jun Han et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


Liao, Y. , Li, J. , Mi, G. , Wang, H. , Wang, Y. , Deng, J. and Han, J. (2016) An Experimental Study on the Temperature Characteristic of a 940 nm Semiconductor Laser Diode. Optics and Photonics Journal, 6, 75-82. doi: 10.4236/opj.2016.68B013.

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