Materials Sciences and Applications

Vol.2 No.8(2011), Paper ID 6702, 7 pages

DOI:10.4236/msa.2011.28135

 

Schottky Barriers on Layered Anisotropic Semiconductor – WSe2 – with 1000 Å Indium Metal Thickness

 

Achamma John Mathai, Chalappally Kesav Sumesh, Bharat Purushotamds Modi

 

Department of Applied Physics, Indian School of Mines, Dhanbad, India

 

Copyright © 2011 Achamma John Mathai, Chalappally Kesav Sumesh, Bharat Purushotamds Modi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


A. Mathai, C. Sumesh and B. Modi, "Schottky Barriers on Layered Anisotropic Semiconductor – WSe2 – with 1000 Å Indium Metal Thickness," Materials Sciences and Applications, Vol. 2 No. 8, 2011, pp. 1000-1006. doi: 10.4236/msa.2011.28135.

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