Microscopy Research

Vol.3 No.1(2015), Paper ID 53664, 11 pages

DOI:10.4236/mr.2015.31002

 

Atomic Force Microscopy Studies on GaAs/In Bilayers Deposited on Si (100)

 

Miguel Ángel Venegas, Roberto Bernal- Correa, Máximo López- López, Álvaro Pulzara- Mora

 

Departamento de Física, Centro de Investigación y de Estudios Avanzados del I.P.N., México D.F., México
Laboratorio de Nanoestructuras Semiconductoras, Universidad Nacional de Colombia, Manizales, Colombia
Departamento de Física, Centro de Investigación y de Estudios Avanzados del I.P.N., México D.F., México
Laboratorio de Nanoestructuras Semiconductoras, Universidad Nacional de Colombia, Manizales, Colombia

 

Copyright © 2015 Miguel Ángel Venegas, Roberto Bernal- Correa, Máximo López- López, Álvaro Pulzara- Mora et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


Venegas, M. , Correa, R. , López, M. and Mora, Á. (2015) Atomic Force Microscopy Studies on GaAs/In Bilayers Deposited on Si (100). Microscopy Research, 3, 6-16. doi: 10.4236/mr.2015.31002.

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