Energy and Power Engineering

Vol.5 No.4BB(2013), Paper ID 39683, 4 pages

DOI:10.4236/epe.2013.54B243

 

Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET

 

Gang Chen, Song Bai, Yonghong Tao, Yun Li

 

1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China 2Nanjing Electronic Devices Institute, Nanjing, China
1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China 2Nanjing Electronic Devices Institute, Nanjing, China
Nanjing Electronic Devices Institute, Nanjing, China
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China

 

Copyright © 2013 Gang Chen, Song Bai, Yonghong Tao, Yun Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


G. Chen, S. Bai, Y. Tao and Y. Li, "Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET," Energy and Power Engineering, Vol. 5 No. 4B, 2013, pp. 1284-1287. doi: 10.4236/epe.2013.54B243.

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