Modeling and Numerical Simulation of Material Science

Vol.3 No.4BB(2013), Paper ID 38642, 6 pages

DOI:10.4236/mnsms.2013.34B003

 

Atomistic Simulation of Undissociated 60° ; Basal Dislocation in Wurtzite GaN.

 

I. Belabbas, J. Chen, Ph. Komninou, G. Nouet

 

Groupe de Cristallographie et de Simulation des Matériaux, Laboratoire de Physico-Chimie des Matériaux et Catalyse. Université Abderrahmane Mira, Beja?a (06000), Algérie.
CIMAP, UMR6252 CNRS-CEA-ENSICAEN-Université de Caen Basse-Normandie, 14032, France.
Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
Centre de Recherche sur les Ions, les Matériaux et la Photonique, 6 Boulevard du Maréchal Juin, 14050 Caen cedex, France

 

Copyright © 2013 I. Belabbas, J. Chen, Ph. Komninou, G. Nouet et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


I. Belabbas, J. Chen, P. Komninou and G. Nouet, "Atomistic Simulation of Undissociated 60° ; Basal Dislocation in Wurtzite GaN.," Modeling and Numerical Simulation of Material Science, Vol. 3 No. 4B, 2013, pp. 11-16. doi: 10.4236/mnsms.2013.34B003.

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