World Journal of Condensed Matter Physics

Vol.3 No.1(2013), Paper ID 28329, 6 pages

DOI:10.4236/wjcmp.2013.31012

 

Graphene-Semiconductor Quantum Well with Asymmetric Energy Gaps

 

J. T. Wang, D. S. Guo, G. L Zhao, J. C. Chen, Z. W. Sun, A. Ignatiev

 

Department of Physics, Southern University and A & M College, Baton Rouge, USA
Department of Physics, Southern University and A & M College, Baton Rouge, USA
Department of Physics, Southern University and A & M College, Baton Rouge, USA
Department of Physics, Xiamen University, Xiamen, China
Institute of Mechanics, Chinese Academy of Sciences, Beijing, China
Department of Physics, University of Houston, Houston, USA

 

Copyright © 2013 J. T. Wang, D. S. Guo, G. L Zhao, J. C. Chen, Z. W. Sun, A. Ignatiev et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


J. Wang, D. Guo, G. Zhao, J. Chen, Z. Sun and A. Ignatiev, "Graphene-Semiconductor Quantum Well with Asymmetric Energy Gaps," World Journal of Condensed Matter Physics, Vol. 3 No. 1, 2013, pp. 67-72. doi: 10.4236/wjcmp.2013.31012.

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