Modeling and Numerical Simulation of Material Science

Vol.3 No.1BB(2013), Paper ID 26923, 3 pages

DOI:10.4236/mnsms.2013.31B006

 

The Charge Storage of Doubly Stacked Nanocrystalline-Si based Metal Insulator Semiconductor Memory Structure

 

Xiang Wang, Chao Song, Yanqing Guo, Jie Song, Rui Huang

 

Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou, People’s Republic of China
Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou, People’s Republic of China
Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou, People’s Republic of China
Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou, People’s Republic of China
Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou, People’s Republic of China

 

Copyright © 2013 Xiang Wang, Chao Song, Yanqing Guo, Jie Song, Rui Huang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


X. Wang, C. Song, Y. Guo, J. Song and R. Huang, "The Charge Storage of Doubly Stacked Nanocrystalline-Si based Metal Insulator Semiconductor Memory Structure," Modeling and Numerical Simulation of Material Science, Vol. 3 No. 1B, 2013, pp. 20-22. doi: 10.4236/mnsms.2013.31B006.

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