Crystal Structure Theory and Applications

Vol.1 No.3(2012), Paper ID 26164, 6 pages

DOI:10.4236/csta.2012.13012

 

Low Temperature Growth of Hydrogenated Silicon Prepared by PECVD from Argon Diluted Silane Plasma

 

Rachid Amrani, Pascale Abboud, Larbi Chahed, Yvan Cuminal

 

IES, UMR, Université Montpellier II, Place Eugène Bataillon, Montpellier, France
IES, UMR, Université Montpellier II, Place Eugène Bataillon, Montpellier, France
LPCMME, Département de Physique, Université d’Oran ES-Sénia, Oran, Algérie
IES, UMR, Université Montpellier II, Place Eugène Bataillon, Montpellier, France

 

Copyright © 2012 Rachid Amrani, Pascale Abboud, Larbi Chahed, Yvan Cuminal et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


R. Amrani, P. Abboud, L. Chahed and Y. Cuminal, "Low Temperature Growth of Hydrogenated Silicon Prepared by PECVD from Argon Diluted Silane Plasma," Crystal Structure Theory and Applications, Vol. 1 No. 3, 2012, pp. 62-67. doi: 10.4236/csta.2012.13012.

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