World Journal of Nano Science and Engineering

Vol.2 No.4(2012), Paper ID 25311, 5 pages

DOI:10.4236/wjnse.2012.24022

 

New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature

 

Amine Touati, Samir Chatbouri, Nabil Sghaier, Adel Kalboussi

 

Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia
Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia
Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia
Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia

 

Copyright © 2012 Amine Touati, Samir Chatbouri, Nabil Sghaier, Adel Kalboussi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


A. Touati, S. Chatbouri, N. Sghaier and A. Kalboussi, "New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature," World Journal of Nano Science and Engineering, Vol. 2 No. 4, 2012, pp. 171-175. doi: 10.4236/wjnse.2012.24022.

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