Optics and Photonics Journal

Vol.2 No.3(2012), Paper ID 22501, 4 pages

DOI:10.4236/opj.2012.23028

 

Enhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation

 

Chung-Mo Yang, Dong-Seok Kim, Yun Soo Park, Jae-Hoon Lee, Yong Soo Lee, Jung-Hee Lee

 

School of Electrical Engineering and Computer Science Kyungpook National University, Daegu, Republic of Korea
School of Electrical Engineering and Computer Science Kyungpook National University, Daegu, Republic of Korea
School of Electrical Engineering and Computer Science Kyungpook National University, Daegu, Republic of Korea
GaN Power Research Group, R&D Institute, Samsung LED Co., Ltd, Suwon, Republic of Korea
School of Electrical Engineering and Computer Science Kyungpook National University, Daegu, Republic of Korea
School of Electrical Engineering and Computer Science Kyungpook National University, Daegu, Republic of Korea

 

Copyright © 2012 Chung-Mo Yang, Dong-Seok Kim, Yun Soo Park, Jae-Hoon Lee, Yong Soo Lee, Jung-Hee Lee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


Yang, C. , Kim, D. , Park, Y. , Lee, J. , Lee, Y. and Lee, J. (2012) Enhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation. Optics and Photonics Journal, 2, 185-192. doi: 10.4236/opj.2012.23028.

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