Advances in Materials Physics and Chemistry

Vol.2 No.1(2012), Paper ID 17902, 4 pages

DOI:10.4236/ampc.2012.21009

 

Study the Effect of Irradiation Time and HF Concentration on Porosity of Porous Silicon and Study Some of the Electrical Properties of Its Based Device

 

Nathera Abass Ali Al-Temeeme, Ghaida Salman Muhammed

 

Physics Department, College of Science, University of Baghdad, Baghdad, Iraq
Physics Department, College of Science, University of Baghdad, Baghdad, Iraq

 

Copyright © 2012 Nathera Abass Ali Al-Temeeme, Ghaida Salman Muhammed et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

 

How to Cite this Article


N. Abass Ali Al-Temeeme and G. Salman Muhammed, "Study the Effect of Irradiation Time and HF Concentration on Porosity of Porous Silicon and Study Some of the Electrical Properties of Its Based Device," Advances in Materials Physics and Chemistry, Vol. 2 No. 1, 2012, pp. 55-58. doi: 10.4236/ampc.2012.21009.

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