Stability and Leakage Analysis of a Novel PP Based 9T SRAM Cell Using N Curve at Deep Submicron Technology for Multimedia Applications
Shilpi Birla, Rakesh Kumar Singh, Manisha Pattanaik
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DOI: 10.4236/cs.2011.24038   PDF    HTML     6,826 Downloads   11,468 Views   Citations

Abstract

Due to continuous scaling of CMOS, stability is a prime concerned for CMOS SRAM memory cells. As scaling will increase the packing density but at the same time it is affecting the stability which leads to write failures and read disturbs of the conventional 6T SRAM cell. To increase the stability of the cell various SRAM cell topologies has been introduced, 8T SRAM is one of them but it has its limitation like read disturbance. In this paper we have analyzed a novel PP based 9T SRAM at 45 nm technology. Cell which has 33% increased SVNM (Static Voltage Noise Margin) from 6T and also 22%.reduced leakage power. N curve analysis has been done to find the various stability factors. As compared to the 10T SRAM cell it is more area efficient.

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S. Birla, R. Singh and M. Pattanaik, "Stability and Leakage Analysis of a Novel PP Based 9T SRAM Cell Using N Curve at Deep Submicron Technology for Multimedia Applications," Circuits and Systems, Vol. 2 No. 4, 2011, pp. 274-280. doi: 10.4236/cs.2011.24038.

Conflicts of Interest

The authors declare no conflicts of interest.

References

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