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Thermodynamic Properties of Semiconductors with Defects

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DOI: 10.4236/msa.2011.29166    4,345 Downloads   7,347 Views   Citations

ABSTRACT

Thermodynamic properties of diamond cubic and zinc-blende semiconductors with point defects are considered by the statistical moment method (SMM). The thermal expansion coefficient, the specific heats at constant volume and those at constant pressure, CV and CP, and the isothermal compressibility are derived analytically for semiconductors with defects. The SMM calculated thermodynamic quantities of the Si, and GaAs semiconductors with defects are in good agreement with the experimental results.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

V. Hung and L. Thanh, "Thermodynamic Properties of Semiconductors with Defects," Materials Sciences and Applications, Vol. 2 No. 9, 2011, pp. 1225-1232. doi: 10.4236/msa.2011.29166.

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