Electronic Transport Study of ZnTe and ZnSe

Siham Khedim, Nasr-Eddine Chabane Sari, Boumediene Benyoucef, Benyounes Bouazza

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DOI: 10.4236/msa.2011.25047                

Abstract

The transport properties of electrons in ZnTe and ZnSe are of great interest because of their numerous technological applications. This paper investigates several calculation results of Monte Carlo device simulation. The average quantities directly accessible by the simulation are the drift velocity, the carriers’ energy and diffusion. The method we choosed to study the transport phenomena uses a three valley model (Γ, L, X) non-parabolic. The results have been obtained by applying the electric field in the direction <100>. Finally we compared our results with those obtained previously.

Keywords

Transport Properties, Monte Carlo Method, Three Valley Model, Semiconductor Materials

Conflicts of Interest

The authors declare no conflicts of interest.

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