Modelling of Thermal Behavior N-Doped Silicon Resistor

Fouad Kerrour, Ali Boukabache, Patrick Pons

Laboratory of Architecture and Systems Analysis, National Centre of Scientific Research, Toulouse, France.
Modeling of Energy Renewable Devices and Nano-Metric Laboratory, University of Mentouri, Constantine, Algeria.

DOI: 10.4236/jst.2012.23019                

Abstract

From the analysis of the frequently models of mobility used in the literature, we determine by an identification method the temperature coefficients α and β of a silicon resistance doped with donor atoms. Their variations show a non linear dependence according to the doping and the existence of a minimal value at particular concentration. Moreover, the comparison between the obtained results and those of a P-type resistance shows that there is a strong similarity in their thermal behaviours, except for a particular couple of α and β.

Keywords

Silicon; TCRs, Mobility; Doping; Temperature

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1]	A. Boukabache and P. Pons, “Doping Effects on Thermal Behaviour of Silicon Resistor,” Electronics Letters, Vol. 38, No. 7, 2002, pp. 342-343. doi:10.1049/el:20020221
[2]	N. D. Arora and D. J. Roulston, “Electron and Hole Motilities in Silicon as a Function of Concentration and Temperature” IEEE Transactions on Electron Devices, Vol. 29, No. 2, 1982, pp. 292-295. doi:10.1109/T-ED.1982.20698
[3]	D. B. M. Klaassen, “Unified Model for Device Simulation-I-II. Temperature Dependence of Carrier mobility and Life Time A,” Solid State Electronic, Vol. 35, No. 7, 1992, pp.953-967.
[4]	J. M. Dorckel and P. H. Leturcq, “Carrier Motilities in Silicon Semi-Empirically Related to Temperature, Doping and Injection Level,” Solid State Electronic, Vol. 24, No. 9, 1981, pp. 821-825. doi:10.1016/0038-1101(81)90097-6
[5]	C. Lombardi, S. Manzini, A. Saporito and M. Vanzi, “A Physically Based Mobility Model for Numerical Simulation of Non Planar Devices,” IEEE Transacitions Computer-Aided Design, Vol. 7, 1988, pp. 1164-1171.
[6]	T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva1 and S. N. Yurkov1, “Carrier Mobility Model for Simulation of SiC-Based Electronic Devices,” Semiconductor Science and Technology, Vol. 17, No. 9, 2002, pp. 974-977.