Nanocapacitor with a Cantor Multi-Layered Structure

Rubén Montelongo, David González, Ricardo Bustos, Gabriel González

Departamento de Electrónica, Sistemas e Informática, Instituto Tecnológico y de Estudios Superiores de Occidente, Periférico Sur Manuel Gómez Morín 8585 C.P. 45604, Tlaquepaque, Jal., MEXICO.
Departamento de Matemáticas y Física, Instituto Tecnológico y de Estudios Superiores de Occidente, Periférico Sur Manuel Gómez Morín 8585 C.P. 45604, Tlaquepaque, Jal., MEXICO.

DOI: 10.4236/jmp.2012.39132                

Abstract

We calculate numerically the quantum capacitance of a nanocapacitor formed of oxide-silicon layers deposited alternately with their widths following a Cantor set structure. We show that this configuration brings about a nano-hybrid capacitor which allows a classical and quantum behavior depending on the Cantor generation. In addition, we propose an approximate equivalent circuit representation for the nano-hybrid capacitor.

Keywords

Nanocapacitor; Cantor Structure; Schrodinger-Poisson Equation

Conflicts of Interest

The authors declare no conflicts of interest.

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