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Study the Effect of Irradiation Time and HF Concentration on Porosity of Porous Silicon and Study Some of the Electrical Properties of Its Based Device

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DOI: 10.4236/ampc.2012.21009    3,417 Downloads   7,068 Views   Citations

ABSTRACT

Porous silicon has been produced in this work by photochemical etching process (PC).The irradiation has been achieved using ordinary light source (150δ250 W) power and (875 nm) wavelength. The influence of various irradiation times and HF concentration on porosity of PSi material was investigated by depending on gravimetric measurements. The I-V and C-V characteristics for CdS/PSi structure have been investigated in this work too.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

N. Abass Ali Al-Temeeme and G. Salman Muhammed, "Study the Effect of Irradiation Time and HF Concentration on Porosity of Porous Silicon and Study Some of the Electrical Properties of Its Based Device," Advances in Materials Physics and Chemistry, Vol. 2 No. 1, 2012, pp. 55-58. doi: 10.4236/ampc.2012.21009.

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