Study of Nonradiative Recombination Centers in n-GaN Grown on LT-GaN and AlN Buffer Layer by Below-Gap Excitation

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ISSN Print: 2162-531X
ISSN Online: 2162-5328
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"Study of Nonradiative Recombination Centers in n-GaN Grown on LT-GaN and AlN Buffer Layer by Below-Gap Excitation"
written by M. D. Haque, M. Julkarnain, A. Z. M. Touhidul Islam, N. Kamata,
published by Advances in Materials Physics and Chemistry, Vol.8 No.3, 2018

has been cited by the following article(s):

[1]	Superlattice period dependence on nonradiative recombination centers in the n-AlGaN layer of UV-B region revealed by below-gap excitation light
	2020

[2]	Optical Characterization of Defect levels in AlGaN-based Light Emitting Materials
	2020

[3]	Nonradiative recombination centers in deep UV-wavelength AlGaN quantum wells detected by below-gap excitation light
	Japanese Journal of Applied Physics, 2019

[1]	Superlattice period dependence on nonradiative recombination centers in the n-AlGaN layer of UV-B region revealed by below-gap excitation light AIP Advances, 2020 DOI:10.1063/1.5134698

[2]	Superlattice period dependence on nonradiative recombination centers in the n-AlGaN layer of UV-B region revealed by below-gap excitation light AIP Advances, 2020 DOI:10.1063/1.5134698

[3]	Nonradiative recombination centers in deep UV-wavelength AlGaN quantum wells detected by below-gap excitation light Japanese Journal of Applied Physics, 2019 DOI:10.7567/1347-4065/ab1069

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