Deep Traps and Parasitic Effects in Al<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces

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ISSN Print: 2333-9705
ISSN Online: 2333-9721
www.scirp.org/journal/oalibj
E-mail: service@oalib.com

"Deep Traps and Parasitic Effects in Al_0.25Ga_0.75N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces"
written by Salah Saadaoui, Olfa Fathallah, Mohamed Mongi Ben Salem, Christophe Gaquière, Hassen Maaref,
published by Open Access Library Journal, Vol.2 No.8, 2015

has been cited by the following article(s):

[1]	Correlation between Kink effect and trapping mechanism through H1 hole trap in Al 0.22 Ga 0.78 N/GaN/SiC HEMTs by current DLTS: Field effect enhancement
	2020

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