"
Growth Optimization, Strain Compensation and Structure Design of InAs/GaSb Type-II Superlattices for Mid-Infrared Imaging"
written by Yuxin Song, Shumin Wang, Carl Asplund, Rickard Marcks von Würtemberg, Hedda Malm, Amir Karim, Xiang Lu, Jun Shao,
published by
Crystal Structure Theory and Applications,
Vol.2 No.2, 2013
has been cited by the following article(s):
[1]
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Optoelectronic Transport Properties of Nanostructured Multi-Quantum Well InAs/GaSb Type II LWIR and MWIR Detectors
Journal of Electronic Materials,
2022
DOI:10.1007/s11664-022-09906-y
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[2]
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Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy
Chinese Physics B,
2022
DOI:10.1088/1674-1056/ac8729
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[3]
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Strain-induced the dark current characteristics in InAs/GaSb type-II superlattice for mid-wave detector
Journal of Semiconductors,
2020
DOI:10.1088/1674-4926/41/6/062302
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[4]
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GaAsSb layer thickness dependence of arsenic incorporation on InAs/GaAsSb superlattice on InAs substrate grown by metalorganic vapor phase epitaxy for mid-infrared device
Japanese Journal of Applied Physics,
2018
DOI:10.7567/JJAP.57.08PD05
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[5]
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Passivation of long-wave infrared InAs/GaSb superlattice detectors with epitaxially grown ZnTe
Infrared Technology and Applications XL,
2014
DOI:10.1117/12.2050490
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