Author(s)

M. K. Bakhadyrhanov^1*, U. X. Sodikov¹, D. Melibayev², Tuerdi Wumaier³, S. V. Koveshnikov¹, K. A. Khodjanepesov², Jiangxiang Zhan³

¹Tashkent State Technical University, Tashkent, Uzbekistan.
²Turkmenistan State University of Transport Communication, Ashgabat, Turkmenistan.
³Xinjiang Institute of Engineering, Urumchi, China.

The paper presents unique functional capabilities of silicon with nanoclusters of impurity atoms with various characters. It is shown that, depending on the nature of the clusters, it is possible to expand the spectral diapason of sensitivity towards the IR region and obtain silicon with anomalously high negative mag-netoresistance (Δρ/ρ > 100%) at room temperature. The formation of clusters of impurity atoms with different nature and concentration in the lattice of semiconductor materials is a new approach for obtaining bulk-nanostructured silicon with unique physical properties.

Silicon, Spectral Range, Elementary Cell, Binary Nanocluster, Quantum Dots, Photovoltaic Cell, Multicascade PV Cell, Spectral Sensitivity, IR Irradiation, Magnetic Properties, Photoconductivity, Nanoscale

Bakhadyrhanov, M. , Sodikov, U. , Melibayev, D. , Wumaier, T. , Koveshnikov, S. , Khodjanepesov, K. and Zhan, J. (2018) Silicon with Clusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic Energetics. Journal of Materials Science and Chemical Engineering, 6, 180-190. doi: 10.4236/msce.2018.64017.