STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon - Journal of Materials Science and Chemical Engineering

MSCE > Vol.5 No.1, January 2017

STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon ()

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Download as PDF (Size: 1875KB) PP. 102-108

DOI: 10.4236/msce.2017.51014 3,151 Downloads 3,890 Views Citations

Author(s)

Junji Yamanaka¹, Chiaya Yamamoto^2,3, Hiroki Nakaie¹, Tetsuji Arai¹, Keisuke Arimoto¹, Kosuke O. Hara¹, Kiyokazu Nakagawa¹

Affiliation(s)

¹Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan.
²Center for Creative Technology, University of Yamanashi, Kofu, Japan.
³Center for Instrumental Analysis, University of Yamanashi, Kofu, Japan.

ABSTRACT

We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.

KEYWORDS

STEM Moiré, Lattice Strain, Ge on Si, Plasma Heating

Share and Cite:

Yamanaka, J. , Yamamoto, C. , Nakaie, H. , Arai, T. , Arimoto, K. , O. Hara, K. and Nakagawa, K. (2017) STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon. Journal of Materials Science and Chemical Engineering, 5, 102-108. doi: 10.4236/msce.2017.51014.

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