Author(s)

Masato Ohmukai¹, Takuya Nakagawa², Ayumu Matsumoto³

¹Department of Electrical and Computer Engineering, Akashi College of Technology, Akashi, Japan.
²Technical Education Support Center, Akashi College of Technology, Akashi, Japan.
³Collaborative Laboratories for Advanced Decommissioning Science, Japan Atomic Energy Agency, Ibaraki, Japan.

ZnO films were deposited on glass substrates by means of a direct current (DC) sputtering technique. The physical properties of the films were investigated on the basis of X-ray diffraction measurements. It was found that as-deposited films show c-axis oriented crystal normal to the surface with the extension of c axis by 1.27% that is estimated from the shift of the peak in the X-ray diffraction pattern. Post-deposition annealing in air at higher than 400℃ eliminates the shift and sharpens the diffraction peak structure at the same time. The electrical resistivity continues to decrease from 500 Ω•cm down to 0.6 Ω•cm by annealing as high as 600℃.

ZnO Film, DC Sputtering, Annealing, X-Ray Analysis

Ohmukai, M. , Nakagawa, T. and Matsumoto, A. (2016) ZnO Films Deposited on Glass by Means of DC Sputtering. Journal of Materials Science and Chemical Engineering, 4, 1-7. doi: 10.4236/msce.2016.410001.