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Effect of dislocation scattering on electron mobility in GaN

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DOI: 10.4236/ns.2011.39106    5,326 Downloads   9,926 Views   Citations


This paper presents the calculation of electron mobility of GaN at various temperatures using Relaxation Time Approximation (RTA) method. The effect of dislocation scattering on electron mobility in GaN is studied. We have discussed about the role of important scattering mechanisms in GaN. The electron mobility values thus obtained are compared with other available experimental and theoretical results.

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The authors declare no conflicts of interest.

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P., R. and Mallick, P. (2011) Effect of dislocation scattering on electron mobility in GaN. Natural Science, 3, 812-815. doi: 10.4236/ns.2011.39106.


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