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Electric-Field-Assisted Growth of Ga-Doped ZnO Nanorods Arrays for Dye-Sensitized Solar Cells

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DOI: 10.4236/jpee.2015.312002    3,238 Downloads   3,716 Views   Citations

ABSTRACT

A photoanode with Ga-doped ZnO nanorods has been prepared on F-doped SnO2 (FTO) coated glass substrate and its application in dye-sensitized solar cells (DSSCs) has been investigated. Ga-doped ZnO nanorods have been synthesized by an electric-field-assisted wet chemical approach at 80?C. Under a direct current electric field, the nanorods predominantly grow on cathodes. The results of the X-ray photoelectron spectroscopy and photoluminescence verify that Ga dopant is successfully incorporated into the ZnO wurtzite lattice structure. Finally, employing Ga-doped ZnO nanorods with the length of ~5 μm as the photoanode of DSSCs, an overall energy conversion efficiency of 2.56% is achieved. The dramatically improved performance of Ga-doped ZnO based DSSCs compared with that of pure ZnO is due to the higher electron conductivity.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Duan, J. , Xiong, Q. , Hu, J. and Wang, H. (2015) Electric-Field-Assisted Growth of Ga-Doped ZnO Nanorods Arrays for Dye-Sensitized Solar Cells. Journal of Power and Energy Engineering, 3, 11-18. doi: 10.4236/jpee.2015.312002.

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