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Electric-Field-Assisted Growth of Ga-Doped ZnO Nanorods Arrays for Dye-Sensitized Solar Cells

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DOI: 10.4236/jpee.2015.312002    3,238 Downloads   3,716 Views   Citations


A photoanode with Ga-doped ZnO nanorods has been prepared on F-doped SnO2 (FTO) coated glass substrate and its application in dye-sensitized solar cells (DSSCs) has been investigated. Ga-doped ZnO nanorods have been synthesized by an electric-field-assisted wet chemical approach at 80?C. Under a direct current electric field, the nanorods predominantly grow on cathodes. The results of the X-ray photoelectron spectroscopy and photoluminescence verify that Ga dopant is successfully incorporated into the ZnO wurtzite lattice structure. Finally, employing Ga-doped ZnO nanorods with the length of ~5 μm as the photoanode of DSSCs, an overall energy conversion efficiency of 2.56% is achieved. The dramatically improved performance of Ga-doped ZnO based DSSCs compared with that of pure ZnO is due to the higher electron conductivity.

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Duan, J. , Xiong, Q. , Hu, J. and Wang, H. (2015) Electric-Field-Assisted Growth of Ga-Doped ZnO Nanorods Arrays for Dye-Sensitized Solar Cells. Journal of Power and Energy Engineering, 3, 11-18. doi: 10.4236/jpee.2015.312002.


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