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Performance of High Indium Content InGaAs p-i-n Detector: A Simulation Study

DOI: 10.4236/wjet.2015.34B002    3,218 Downloads   3,543 Views  

ABSTRACT

In this work, we investigate the performance of InGaAs p-i-n photodetectors with cut-off wavelengths near 2.6 μm. The influences of different substrate materials on the optoelectronic properties of InGaAs detector are also compared and discussed. GaAs-based device shows a significant enhancement in detector with a better performance for a InGaAs photodetector compared to InP- based device. In addition, our results show that the device performance is influenced by the conduction band offset. This work proves that InAlAs/InGaAs/GaAs structure is a promising candidate for high performance detector with optimally tuned band gap.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Zhang, Z. , Miao, G. , Song, H. , Jiang, H. , Li, Z. , Li, D. , Sun, X. and Chen, Y. (2015) Performance of High Indium Content InGaAs p-i-n Detector: A Simulation Study. World Journal of Engineering and Technology, 3, 6-10. doi: 10.4236/wjet.2015.34B002.

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