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A Ge-Graded SiGe HBT with β > 100 and fT = 67 GHz

DOI: 10.4236/wjet.2015.34B001    2,306 Downloads   2,615 Views  

ABSTRACT

By using reduced pressure chemical vapor deposition (RPCVD), the high strained, Ge-graded SiGe film growth has been realized. The film was used as a base of the HBT (Heterojunction Bipolar Transistor) developed in 0.35 μm SiGe BiCMOS process technology, and made the device give good DC characteristics (β > 100) and high-frequency performance (fT = 67 GHz), thus meeting the requirements for technical specifications in 0.35 μm SiGe BiCMOS process technology.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Zhang, J. , Yang, Y. , Chen, G. , Wang, Y. , Hu, D. , Tan, K. , Cui, W. and Tang, Z. (2015) A Ge-Graded SiGe HBT with β > 100 and fT = 67 GHz. World Journal of Engineering and Technology, 3, 1-5. doi: 10.4236/wjet.2015.34B001.

References

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