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The Effect of Doped Indium on the Electrical and Optical Properties of (Se0.7Te0.3)1−xInx Thin Films

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DOI: 10.4236/ampc.2015.54015    2,806 Downloads   3,303 Views   Citations

ABSTRACT

In-doped (Se0.7Te0.3) thin films (In: 0, 0.05, and 0.08wt%) with thickness of (150 ± 25 nm) have been deposited on glass substrates by chemical vapor deposition by using selenium, tellurium and indium whose purity is (99.99%) compound alloy. The electrical and optical properties of the thin films were analyzed. The effects of In-doping concentration on the thermoelectric properties of the thin films were investigated by room-temperature measurement of the See beck coefficient and electrical resistivity. The thermoelectric power factor shows the best result at 0.05wt% in doping. The See beck coefficients are positive with increasing in doping concentration from 0 to 0.08wt%. And the thin films show p-type conduction. For optical properties, the transmission of all samples was approximated to 90%.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Abdullah, M. , Ahmad, A. and Mohammed, A. (2015) The Effect of Doped Indium on the Electrical and Optical Properties of (Se0.7Te0.3)1−xInx Thin Films. Advances in Materials Physics and Chemistry, 5, 140-149. doi: 10.4236/ampc.2015.54015.

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