Share This Article:

On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity

Abstract Full-Text HTML XML Download Download as PDF (Size:2725KB) PP. 166-178
DOI: 10.4236/wjcmp.2014.43021    1,859 Downloads   2,367 Views   Citations

ABSTRACT

This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aTζ) at low temperatures (T < 50 K), 0.4 < ζ < 0.8. Structural transitions of nanocrystals take place at high temperatures (T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Abdurakhmanov, G. (2014) On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 3. The Minimum of Temperature Dependence of Resistivity. World Journal of Condensed Matter Physics, 4, 166-178. doi: 10.4236/wjcmp.2014.43021.

References

[1] Abdurakhmanov, G. (2011) On the Conduction Mechanism of Silicate Glass, Doped by Oxide Compounds of Ruthenium: Diffusion and Percolation Levels. World Journal of Condensed Matter Physics, 1, 19-23.
http://dx.doi.org/10.4236/wjcmp.2011.12004
[2] Abdurakhmanov, G. (2011) On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors). 2. Nanocrystals in the Glass and Charge Carrier’s Localization. American Journal Materials Science, 1, 12-17.
[3] Pike, G.E. and Seager, C.H. (1977) Electrical Properties and Conduction Mechanisms of Ru-Based Thick-Film (Cermet) Resistors. Journal of Applied Physics, 48, 5152-5169.
http://dx.doi.org/10.1063/1.323595
[4] Schoepe, W. (1990) Conduction Mechanism in Granular RuO2-Based Thick-Film Resistors. Physica, B165 & 166, 299.
[5] Flachbart, K., Pavlík, V., Tomasovicová, N., Adkins, C.J., Somora, M., Leib, J. and Eska, G. (1998) Conduction Mechanism in RuO2-Based Thick Films. Physica Status Solidi (b), 205, 399-404.
http://dx.doi.org/10.1002/(SICI)1521-3951(199801)205:1<399::AID-PSSB399>3.0.CO;2-X
[6] Smith, D.P.H. and Anderson, J.C. (1980) Electron Conduction in Thick Film Resistors. Thin Solid Films, 71, 79-89.
http://dx.doi.org/10.1016/0040-6090(80)90186-8
[7] Abe, A. and Taketa, Y. (1991) Electrical Conduction in Thick Film Resistors. Journal of Applied Physics, 24, 1163-1171.
http://dx.doi.org/10.1088/0022-3727/24/7/022
[8] Prudenziati, M. and Cattaneo, A. (1976) Thermoelectric Power in Thick Film Resistors. Electrocomponent Science Technology, 3, 181-183.
http://dx.doi.org/10.1155/APEC.3.181
[9] Inokuma, T. and Taketa, Y. (1987) Control of Electrical Properties of RuO2 Thick Film Resistors. Active and Passive Electronic Components, 12, 155-166.
http://dx.doi.org/10.1155/1987/87862
[10] Forlani, F. and Prudenziati, M. (1976) Electrical Conduction by Percolation in Thick-Film Resistors. Electrocomponent Science and Technology, 3, 77-83.
http://dx.doi.org/10.1155/APEC.3.77
[11] Bobran, K., Kusy, A., Stadler, A.W. and Wilczynski, G. (1995) Conduction in RuO2-Based Thick Films. International Journal of Electronics, 78, 113-119.
http://dx.doi.org/10.1080/00207219508926143
[12] Jiang, J.C., Crosbie, G.M., Tian, W., Cameron, K.K. and Pan, X.Q. (2000) Transmission Electron Microscopy Structure and Platinum-Like Temperature Coefficient of Resistance in a Ruthenate-Based Thick Film Resistor with Copper Oxide. Journal of Applied Physics, 88, 1124-1128.
http://dx.doi.org/10.1063/1.373786
[13] Hsieh, Y.H. and Fu, S.L. (1994) A Conduction Model for BaPbO3-Based Thick Film Resistors. IEEE Transactions on Components, Packaging, and Manufacturing Technology, Part A, 17, 316-319.
http://dx.doi.org/10.1109/95.296416
[14] Zvyagintsev, O.E., Kolbin, N.I., et al. (1965) Ruthenium Chemistry. In: Zvyagintsev, O.E., Ed., Nauka Publisheing House Moscow. (In Russian)
[15] Lazarev, V.B., Sobolev, V.V. and Shapligin, M.S. (1983) Chemical and Physical Properties of Simple Metal Oxides. Nauka Publisheing House, Moscow. (In Russian)
[16] Vionnet-Menot, S., Grimaldi, C., Maeder, T., Ryser, P. and Strassler, S. (2005) Study of Electrical Properties of Piezoresistive Pastes and Determination of the Electrical Transport. Journal of the European Ceramic Society, 25, 21292132.
http://dx.doi.org/10.1016/j.jeurceramsoc.2005.03.018
[17] Vionnet-Menot, S., Grimaldi, C., Maeder, T., Strassler, S. and Ryser, P. (2005) Tunneling-Percolation Origin of Nonuniversality: Theory and Experiments. Physical Review B, 71, Article ID: 064201.
[18] Johner, N. (2009) On the Origin of Transport Non-Universality and Piezoresistivity in Segregated Conductor-Insulator Composites and Application to Thick-Film Resistors. D.Sci. Thesis, école Polytechnique Fédérale DeLausanne, Lausanne.
[19] Grimaldi, C., Maeder, T., Ryser, P. and Strassler, S. (2002) Critical Behavior of the Piezoresistive Response in RuO2-Glass Composites.
http://arXiv.org/abs/cond-mat/0212319v1
[20] Grimaldi, C., Ryser, P. and Strassler, S. (2000) Gauge Factor Enhancement Driven by Heterogeneity in Thick-Film Resistors.
http://arXiv:cond-mat/0010181v1
[21] de Jeu, W.H., Geuskens, R.W.J. and Pike, G.E. (1981) Conduction Mechanisms and 1/f Noise in Thick-Film Resistors with Pb3Rh7O15 and Pb2Ru2O7. Journal of Applied Physics, 52, 4128-4134.
http://dx.doi.org/10.1063/1.329222
[22] Morten, B., Masoero, A., Prudenziati, M. and Manfredini, T. (1994) Evolution of Ruthenate-Based Thick-Film Cermet Resistors. Journal of Physics D: Applied Physics, 27, 2227-2235.
[23] Aers, G.C. and Lui, H.C. (1990) Theory of Resonant Tunneling through an Array of Quantum Dots. Solid State Communications, 73, 19-21.
http://dx.doi.org/10.1016/0038-1098(90)90006-W
[24] Sheng, P. (1980) Fluctuation-Induced Tunneling Conduction in Disordered Materials. Physical Review B, 21, 2180-2195.
http://dx.doi.org/10.1103/PhysRevB.21.2180
[25] Ambegaokar, V., Halperin, B.L. and Langer, J.S. (1971) Hopping Conductivity in Disordered Systems. Physical Review B, 4, 2612-2620.
http://dx.doi.org/10.1103/PhysRevB.4.2612
[26] Mott, N.F. and Davis, E.A. (1979) Electron Processes in Non-Crystalline Materials. Clarendon Press, Oxford.
[27] Ziman, J.M. (1979) Models of Disorder. Cambridge University Press, Cambridge.
[28] Shklovskii, B.I. and Efros, A.L. (1984) Electronic Properties of Doped Semiconductors. Springer, Heidelberg.
http://dx.doi.org/10.1007/978-3-662-02403-4
[29] Bonch-Bruevich, V.L., Zvyagin, I.P., et al. (1981) Electron Theory of the Disordered Semiconductors. In: BonchBruevich, V.L., Ed., Nauka Publisheing House, Moscow. (In Russian)
[30] Lewis, A.J. (1976) Use of Hydrogenation in the Transport Properties of Amorphous Germanium. Physical Review B, 14, 658-668.
http://dx.doi.org/10.1103/PhysRevB.14.658
[31] Roman, J., Pavlik, V., Flachbart, K., Adkins, C.J. and Leib, J. (1997) Electronic Transport in RuO2-Based Thick Film Resistors at Low Temperatures. Journal of Low Temperature Physics, 108, 373-382.
http://dx.doi.org/10.1007/BF02397680
[32] Halder, N.C. and Snyder, R.J. (1984) Measurement of the Tunneling and Hopping Parameters in RuO2 Thick Films. ElectroComponent Science and Technology, 11, 123-136.
http://dx.doi.org/10.1155/APEC.11.123
[33] Hill, R.M. (1980) Electrical Transport in Thick Film Resistors. ElectroComponent Science and Technology, 6, 141-145.
http://dx.doi.org/10.1155/APEC.6.141
[34] Robertson, J. (1977) Conduction Processes in High Value Thick Film Resistors. ElectroComponent Science and Technology, 4, 105-109.
http://dx.doi.org/10.1155/APEC.4.105
[35] Sion, R.P., Atkinson, J.K. and Turner, J.D. (1994) A Novel Model for the Temperature Characteristic of a Thick-Film Piezoresistive Sensor. Sensors and Actuators A: Physical, 42, 460-464.
http://dx.doi.org/10.1016/0924-4247(94)80034-0
[36] Storbeck, I. and Wolf, M. (1985) On Experimental Data of the TCR of TFRs and Their Relation to Theoretical Models of Conduction Mechanism. ElectroComponent Science and Technology, 11, 255-259.
http://dx.doi.org/10.1155/APEC.11.255
[37] Nicoloso, N., LeCorre-Frisch, A., Maier, J. and Brook, R.J. (1995) Conduction Mechanisms in RuO2-Glass Composites. Solid State Ionics, 75, 211-216.
http://dx.doi.org/10.1016/0167-2738(94)00207-9
[38] Carcia, P.F., Champ, S.E. and Flippen, R.B. (1976) High Voltage Stable Thick Film Resistors. Proceedings of the 1976 Electronic Components Conference, San-Francisco, 26-28 April 1976, 156-162.
[39] Prudenziati, M. (1983) Electrical Transport in Thick Film (Cermet) Resistors. ElectroComponent Science and Technology, 10, 285-293.
http://dx.doi.org/10.1155/APEC.10.285
[40] Lee, J. and Vest, R.W. (1983) Firing Studies with a Model Thick Film Resistor System. IEEE Transactions on Components, Hybrids and Manufacturing Technology, 6, 430-435.
[41] Totokawa, M., Tani, T., Yoshimura, M., Yamashita, S., Morikawa, K., Mitsuoka, Y. and Nonaka, T. (2010) Chemical and Piezoresistive Microanalyses at the Interface of RuO2-Glass Diffusion Pairs. Journal of the American Ceramic Society, 93, 481-487.
http://dx.doi.org/10.1111/j.1551-2916.2009.03403.x
[42] Totokawa, M., Yamashita, S., Morikawa, K., Mitsuoka, Y., Tani, T. and Makino, H. (2009) Microanalyses on the RuO2 Particle-Glass Matrix Interface in Thick-Film Resistors with Piezoresistive Effects. International Journal of Applied Ceramic Technology, 6, 195-204.
http://dx.doi.org/10.1111/j.1744-7402.2008.02325.x
[43] Gabáni, S., Flachbart, K., Pavlík, V., Pietriková, A. and Gabániová, M. (2008) Microstructural Analysis and Transport Properties of RuO2-Based Thick Film Resistors. Acta Physica Polonica A, 113, 625-628.
[44] Adachi, K., Iida, S. and Hayashi, K. (1996) Ruthenium Clusters in Lead-Borosilicate Glass in Thick Film Resistors. Journal of Materials Research, 9, 1866-1878.
http://dx.doi.org/10.1557/JMR.1994.1866
[45] Fan, H.Y. (1950) Temperature Dependence of the Energy Gap in Monatomic Semiconductors. Physical Review, 78, 808-809.
http://dx.doi.org/10.1103/PhysRev.78.808.2
[46] Fan, H.Y. (1951) Temperature Dependence of the Energy Gap in Semiconductors. Physical Review, 82, 900-905.
http://dx.doi.org/10.1103/PhysRev.82.900
[47] Passler, R. (1996) Comparison of Different Analytical Descriptions of the Temperature Dependence of the Indirect Energy Gap in Silicon. Solid-State Electronics, 39, 1311-1319.
http://dx.doi.org/10.1016/0038-1101(96)00037-8
[48] Muto, T. and Oyama, S. (1950) Theory of the Themperature Effect of Electronic Energy Bands in Crystals. Progress of Theoretical Physics, 5, 833-843.
http://dx.doi.org/10.1143/ptp/5.5.833
[49] Bansal, K.B., Dixit, V.K., Venkataraman, V. and Bhat, H.L. (2003) Temperature Dependence of the Energy Gap and Free Carrier Absorption in Bulk InAs0.05Sb0.95 Single Crystals. Applied Physics Letters, 82, 4720-4722.
http://dx.doi.org/10.1063/1.1587002
[50] O’Donnell, P. and Chen, X. (1991) Temperature Dependence of Semiconductor Band Gaps. Applied Physics Letters, 58, 2924-2926.
http://dx.doi.org/10.1063/1.104723
[51] Kerimova, E.M., Gasanov, N.Z., Ismailzade, L.A., et al. (2009) Photoelectric and Optical Properties of the Single Crystals of (TiGaS2)1-x(TlInSe2)x Solid Solutions. Proceedings of the Azerbayjan National Academy of Sciences. PhysicalTechnical Sciences, 5, 137-142.
[52] Abrikosov, A. (1972) Introduction to the Theory of Normal Metals. Academic Press, New York and London.
[53] Kittel, C. (1971) Introduction to Solid State Physics. 4th Edition, John Wiley and Sons Inc., New York, London, Sydney, Toronto.

  
comments powered by Disqus

Copyright © 2019 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.