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Effect of Sintering Time on the Structural, Magnetic and Electrical Transport Properties of Mg0.35Cu0.20Zn0.45Fe1.94O4 Ferrites

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DOI: 10.4236/wjcmp.2014.41003    3,970 Downloads   6,007 Views   Citations

ABSTRACT

Spinel-type Mg0.35Cu0.20Zn0.45Fe1.94O4 ferrites were synthesized by using the solid-state reaction technique. The XRD patterns of the sintered samples indicated the formation of single-phase cubic spinel structure. The apparent density of the sample is found to increase whereas porosity decreases with the increase in sintering time. The grain growth of the samples is enhanced with the increase in sintering time which is attributed to the liquid phase due to CuO during sintering. The initial permeability of the ferrite is found to increase with the increase in sintering time but the resonance frequency shifts towards the lower frequency. This increase in permeability is correlated to the increase of density and the grain size of the sample. The resistivity of the samples decreases with 103/T ensuring the semiconducting nature of the samples. Room temperature DC resistivity and activation energy of the samples decrease what is attributed to the increased Fe2+ ions content with the increase in sintering time. The dielectric constant (e) of the samples decreases with increasing frequency whereas e increases as the temperature increases exhibiting normal dielectric behaviour of the magnetic semiconductor ferrite. The observed variation of electrical and dielectric properties is explained on the basis of Fe2+/Fe3+ ionic concentration as well as the electronic hopping frequency between Fe3+ and Fe2+ ions in the present ferrite sample.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

M. Aliuzzaman, M. Haque, M. Ferdous, S. Hoque and M. Hakim, "Effect of Sintering Time on the Structural, Magnetic and Electrical Transport Properties of Mg0.35Cu0.20Zn0.45Fe1.94O4 Ferrites," World Journal of Condensed Matter Physics, Vol. 4 No. 1, 2014, pp. 13-23. doi: 10.4236/wjcmp.2014.41003.

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