Pruned Volterra Models with Memory Effects for Nonlinear Power Amplifiers

Pengpeng Li, Qingfang Zhang, Ping Wang, Zhongshan Xie, Bing Liu

Nanjing University of Aeronautics and Astronautics, Nanjing, China.
Shanghai Institute of Microsystem and Information Technology, Shanghai, China.

DOI: 10.4236/cn.2013.53B2102                

Abstract

In this letter, a novel model is proposed for modeling the nonlinearity and memory effects of power amplifiers. The classical Volterra model is modified through a function of the sum of nonlinearity order with sum of memory length. The parameters of this model can be extracted in digital domain since the model is analyzed based on the envelope signals. The model we proposed enables a substantial reduction in the number of coefficients involved, and with excellent accuracy.

Keywords

Volterra Series; Power Amplifier (PA); Behavioral Model; Memory Effect

Conflicts of Interest

The authors declare no conflicts of interest.

References

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