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ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Crystallographic Behavior

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DOI: 10.4236/csta.2013.22006    3,656 Downloads   7,330 Views   Citations

ABSTRACT

A novel buffer layer consists of titanium oxide grown on a-sapphire by low-pressure chemical vapor deposition using titanum-tetra-iso-propoxide and oxygen gas was used for ZnO epitaxial growth at temperature as low as 340 by plasma-assisted epitaxy using radio-frequency oxygen-gas plasma. XRD and RHEED indicated (0001)Ti2O3 layer in corundum crystal system was epitaxially grown on the substrate in an in-plane relationship of [1-100]Ti2O3// [0001]Al2O3 by uniaxial phase-lock system. Growth behavior of ZnO layer was significantly dependent on the Ti2O3 buffer-layer thickness, for example, dense columnar ZnO-grains were grown on the buffer layer thinner than 10 nm but the hexagonal pyramid-like grains were formed on the thin buffer layers below 2 nm. RHEED observations showed ZnO layer including the pyramid-like grains was epitaxially grown with single-domain on the thin buffer layer of 0.8 nm in the in-plane relationship of [1-100]ZnO//[1-100]Ti2O3//[0001]Al2O3, whereas the multi-domain was included in ZnO layer on the buffer layer above 10 nm.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

S. Yamauchi and Y. Imai, "ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Crystallographic Behavior," Crystal Structure Theory and Applications, Vol. 2 No. 2, 2013, pp. 39-45. doi: 10.4236/csta.2013.22006.

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