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Design of a Low-Noise Front-End Readout Circuit for CdZnTe Detectors

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DOI: 10.4236/jsip.2013.42017    3,575 Downloads   5,392 Views   Citations

ABSTRACT

In this paper, the design of a novel low-noise front-end readout circuit for Cadmium zinc telluride (CdZnTe) X-ray and γ-ray detectors is described. The front-end readout circuits include the charge sensitive amplifier (CSA) and the CR-RC shaper is implemented in TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 4.9 mm × 2.2 mm. The simulation results show that, the noise performance is 46 electrons + 10 electrons/pF, and power consumption is 1.65 mW per channel.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

B. Gan, T. Wei, W. Gao, H. Zeng and Y. Hu, "Design of a Low-Noise Front-End Readout Circuit for CdZnTe Detectors," Journal of Signal and Information Processing, Vol. 4 No. 2, 2013, pp. 123-128. doi: 10.4236/jsip.2013.42017.

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