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Synthesis and Electrical Characterization of BaTiO3 Thin Films on Si(100)

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DOI: 10.4236/msa.2010.14029    6,670 Downloads   12,804 Views   Citations

ABSTRACT

BaTiO3 thin film has been deposited on Si(100) substrate using sol-gel process and deposited by using spin – coating technique. The BaTiO3/Si(100) structures were studied by structural and electrical characteristics. The X-ray diffrac-tion of BaTiO3/Si(100) shows that the diffraction peaks become increasing sharp with increasing calcination tempera-tures indicating the enhance crystallinity of the films. Scanning electron microscopy of BaTiO3 thin films shows the crack free and uniform nature. The capacitance-voltage measurement of BaTiO3 thin film deposited on Si(100) an-nealed at 600℃ shows large frequency dispersion in the accumulation region. The current-voltage measurement of BaTiO3/Si shows the ideality factor was approaches to unity at 600℃.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

V. Chinchamalatpure, S. Ghosh and G. Chaudhari, "Synthesis and Electrical Characterization of BaTiO3 Thin Films on Si(100)," Materials Sciences and Applications, Vol. 1 No. 4, 2010, pp. 187-190. doi: 10.4236/msa.2010.14029.

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