Share This Article:

Drift Mobility, Diffusion Coefficient of Randomly Moving Charge Carriers in Metals and Other Materials with Degenerated Electron Gas

Abstract Full-Text HTML XML Download Download as PDF (Size:300KB) PP. 73-81
DOI: 10.4236/wjcmp.2013.31013    8,341 Downloads   12,369 Views   Citations

ABSTRACT

In this short review some aspects of applications of free electron theory on the ground of the Fermi statistics will be analyzed. There it is an intention to attempt somebody’s attention to problems in widespread literature of interpretation of conductivity of metals, superconductor in the normal state and semiconductors with degenerated electron gas. In literature there are many cases when to these materials the classical statistics is applied. It is well known that the electron heat capacity and thermal noise (and as a consequence the electrical conductivity) are determined by randomly moving electrons, which energy is close to the Fermi energy level, and the other part of electrons, which energy is well below the Fermi level can not be scattered and change its energy. Therefore there was tried as simple as possible on the ground of Fermi distribution, and on random motion of charge carriers, and on the well known experimental results to take general expressions for various kinetic parameters which are applicable for materials both without and with degenerated electron gas. It is shown, that drift mobility of randomly moving charge carriers, depending on the degree degeneracy, can considerably exceed the Hall mobility. Also it is shown that the Einstein relation between the diffusion coefficient and the drift mobility of charge carriers is valid even in the case of degeneracy. There also will be presented the main kinetic parameter values for different metals.

 

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

V. Palenskis, "Drift Mobility, Diffusion Coefficient of Randomly Moving Charge Carriers in Metals and Other Materials with Degenerated Electron Gas," World Journal of Condensed Matter Physics, Vol. 3 No. 1, 2013, pp. 73-81. doi: 10.4236/wjcmp.2013.31013.

References

[1] Ch. Wert and A. R. M. Thomson, “Physics of Solids,” McGraw-Hill Book Company, New York, 1964.
[2] J. M. Ziman, “Principles of the Theory of Solids,” Cambridge University Press, Cambridge, 1972.
[3] A. A. Abrikosov, “Principles of the Theory of Metals,” Nauka Press, Moscow, 1987.
[4] J. S. Blakemore, “Solid State Physics,” Cambridge University Press, Cambridge, 1985.
[5] N. Ashcroft and W. N. D. Mermin, “Solid State Physics,” Holt, Rinehart and Winston, New York, 1976.
[6] Ch. Kittel, “Introduction to Solid State Physics,” John Wiley and Sons, Inc., New York, 1976.
[7] G. E. R. Schulze, “Metallphysik,” Akademie-Verlage, Berlin, 1967.
[8] W. A. Harrison, “Solid State Theory,” McGraw-Hill, New York, 1970.
[9] J. R. Waldram, “Superconductivity of Metals and Cuprates,” Institute of Physics Publishing, London, 1996.
[10] D. M. Eagles, “Concentrations and Mobilities of Holes and Electrons in a Crystal of a 90 K Oxide Superconductors from Analysis of ab-Plane Resistivity and Hall Data,” Solid State Communications, Vol. 69, No. 3, 1989, pp. 229-234. doi:10.1016/0038-1098(89)90840-5
[11] A. T. Fiory and G. S. Grader, “Extraordinary Hall Effect in YBa2Cu3O7 - x Superconductors,” Physical Review B, Vol. 38, No. 13, 1988, pp. 9198-9200. doi:10.1103/PhysRevB.38.9198
[12] Y. Lu, Y. F. Yan, H. M. Duan, L. Lu and L. Li, “Hall Coefficient of Single-Crystal Bi2Sr2CaCu2Oy,” Physical Review B, Vol. 39, No. 1, 1989, pp. 729-731. doi:10.1103/PhysRevB.39.729
[13] J. Clayhold, N. P. Ong, P. H. Hor and C. W. Chu, “Hall Effect of the High-Tc Superconducting Oxides Bi-CaSr-Cu-O and Tl2Ca2Ba2Cu3Ox,” Physical Review B, Vol. 38, No. 10, 1988, pp. 7016-718. doi:10.1103/PhysRevB.38.7016
[14] A. Van der Ziel, “Noise in Solid State Devices and Circuits,” John Wiley & Sons, Inc., New York, 1986.
[15] R. Kubo, “Statistical Mechanics,” North-Holland Publishing Company, Amsterdam, 1965.
[16] V. L. Bonch-Bruevitch and S. G. Kalashnikov, “The Physics of Semiconductors,” Nauka Press, Moscow, 1990.
[17] H. L. Hartnagel, R. Katilius and A. Matulionis, “Microwave Noise in Semiconductor Devices,” John Wiley & Sons, Inc., New York, 2001.
[18] V. Palenskis, “Flicker Noise Problem,” Lithuanian Journal of Physics, Vol. 30, No. 2, 1990, pp. 107-152.
[19] I. K. Kikoin, “Catalogue of Physical Quantities,” Atomizdat, Moscow, 1976.
[20] R. A. Smith, “Semiconductors,” Cambridge University Press, Cambridge, 1978.
[21] M. A. C. Devillers, “Lifetime of Electrons in Metals at Room Temperature,” Solid State Communications, Vol. 49, No. 11, 1990, pp. 1019-1022. doi:10.1016/0038-1098(84)90413-7d
[22] K. L. Chopra, “Thin Film Phenomena,” McGraw-Hill, New York, 1969.

  
comments powered by Disqus

Copyright © 2019 by authors and Scientific Research Publishing Inc.

Creative Commons License

This work and the related PDF file are licensed under a Creative Commons Attribution 4.0 International License.