Photoluminescence Compounds ZnGa₂Se₄ and ZnGa₂Se₄: Eu²⁺

Oktay Tagiyev, Saida Asadullayeva, Gurban Eyyubov, Ulvi Kasumov, Kenan Tagiyev

Institute of Chemistry Azerbaijan NAS, AZ 1143, 33, H. Javid ave., Baku, Azerbaijan.
Institute of Physics of Azerbaijan NAS, AZ-1143, 33, H. Javid ave., Baku, Azerbaijan.

DOI: 10.4236/jmp.2012.38108                

Abstract

Photoluminescence (PL) spectra measurements have been carried out in the ternary chalcopyrite semiconductor compounds ZnGa₂Se₄2Se₄: Eu²⁺ using single-wavelength excitation of a Hg lamp with λ = 365 and 375 nm. Measurements were performed at the temperature range of (120 ~ 220 K) and (110 ~ 230 K) for ZnGa₂Se₄ and ZnGa₂Se₄:Eu²⁺, respectively. No PL was observed for both crystals at the temperatures higher than 220 K (ZnGa₂Se₄) and 230 K (ZnGa₂Se₄:Eu²⁺). At temperatures lower than ~220 K and ~230 K one and three lines were observed for ZnGa₂Se₄ and ZnGa₂Se₄: Eu at 591 nm and 566, 591, 646 nm, respectively. 566 nm line was assigned as due of the 4f⁶5d→ 4f⁷ (⁸S_7/2) transition of Eu²⁺ ions, whereas the rest two lines were attributed to the donor-acceptor recombination pairs. Probability of non-radiation transfers (A = 10⁸ ~10⁹ s^-1), energy of optical phonons (hω= 25 ~ 30 meV), Huan Rice parameter (S = 8 ~ 10), energy of thermal quenching (△E = 0.02 ~ 0.06 eV) were determined from the tem-perature dependences of the full width at half maximum (FWHM = Г(T)).

Keywords

Ternary Chalcopyrite; Photoluminescence; Rare-Earth Elements

Conflicts of Interest

The authors declare no conflicts of interest.

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