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Study of Thermal Conductivity of Porous Silicon Using the Micro-Raman Method

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DOI: 10.4236/ojpc.2012.21001    4,754 Downloads   10,323 Views   Citations

ABSTRACT

In this work, we are interesting in the measurement of thermal conductivity (on the surface and in-depth) of Porous silicon by the micro-Raman spectroscopy. This direct method (micro-Raman spectroscopy) enabled us to develop a systematic means of investigation of the morphology and the thermal conductivity of Porous silicon oxidized or no. The thermal conductivity is studied according to the parameters of anodization and fraction of silicon oxidized. Thermal transport in the porous silicon layers is limited by its porous nature and the blocking of transport in the silicon skeleton what supports its use in the thermal sensors.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

A. Ould-Abbas, M. Bouchaour and N. Sari, "Study of Thermal Conductivity of Porous Silicon Using the Micro-Raman Method," Open Journal of Physical Chemistry, Vol. 2 No. 1, 2012, pp. 1-6. doi: 10.4236/ojpc.2012.21001.

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