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Study of Thermal Conductivity of Porous Silicon Using the Micro-Raman Method

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DOI: 10.4236/ojpc.2012.21001    4,754 Downloads   10,323 Views   Citations


In this work, we are interesting in the measurement of thermal conductivity (on the surface and in-depth) of Porous silicon by the micro-Raman spectroscopy. This direct method (micro-Raman spectroscopy) enabled us to develop a systematic means of investigation of the morphology and the thermal conductivity of Porous silicon oxidized or no. The thermal conductivity is studied according to the parameters of anodization and fraction of silicon oxidized. Thermal transport in the porous silicon layers is limited by its porous nature and the blocking of transport in the silicon skeleton what supports its use in the thermal sensors.

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The authors declare no conflicts of interest.

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A. Ould-Abbas, M. Bouchaour and N. Sari, "Study of Thermal Conductivity of Porous Silicon Using the Micro-Raman Method," Open Journal of Physical Chemistry, Vol. 2 No. 1, 2012, pp. 1-6. doi: 10.4236/ojpc.2012.21001.


[1] L. T. Canham, “Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers,” Applied Physics Letters, Vol. 57, No. 10, 1990, pp. 1046- 1049. doi:10.1063/1.103561
[2] A. G. Cullis, L. Canham and P. D. J. Calcott, “The Structural and Luminescence Properties of Porous Silicon,” Journal of Applied Physics, Vol. 82, No. 3, 1997, p. 909-962. doi:10.1063/1.366536
[3] A. J. Read, R. J. Needs, K. J. Nash, L. T. Canham, P. D. J. Calcott and A. Qteish, “First-Principles Calculations of the Electronic Properties of Silicon Quantum Wires,” Physical Review Letters, Vol. 69, No. 8, 1992, p. 1232. doi:10.1103/PhysRevLett.69.1232
[4] G. Bomchill, A. Halimaoui and R. Herino, “Porous Silicon: The Material and Its Applications to SOI Technologies,” Microelectronic Engineering, Vol. 8, No. 3-4, 1988, pp. 293-310. doi:10.1016/0167-9317(88)90022-6
[5] A. Foucaran, B. Sorli, M. Garcia, F. Pascal-Delannoy, A. Giani and A. Boyer, “Porous Silicon Layer Coupled with Thermoelectric Cooler: A Humidity Sensor,” Sensors & Actuators, Vol. 79, No. 3, 2000, pp. 189-193. doi:10.1016/S0924-4247(99)00285-X
[6] R. Bilyalov, L. Stalmans, G. Beaucarne, R. Loo, M. Cayman, J. Poortmans and J. Nijs, “Porous Silicon as an Intermediate Layer for Thin-Film Solar Cell,” Solar Energy Materials and Solar Cells, Vol. 65, No. 1-4, 2001, pp. 477-485. doi:10.1016/S0927-0248(00)00130-6
[7] R. B. Bergmann, “Crystalline Si Thin-Film Solar Cells: A Review,” Applied Physics A, Vol. 69, No. 2, 1999, pp. 187-194. doi:10.1007/s003390050989
[8] R. Brendel, “A Novel Process for Ultrathin Monocrystalline Silicon Solar Cells on Glass,” Proceeding of the 14th European Photovoltaic Solar Energy Conference, Barcelona, 6-10 June 1997, p. 1354.
[9] S. Huang, X. D. Ruan, J. Zou, X. Fu and H. Y. Yang, “Thermal Conductivity Measurement of Submicrometer- Scale Silicon Dioxide Films by an Extended Micro-Ra- man Method,” Microsystem Technologies, Vol. 15, 2009, pp. 837-842
[10] G. Gesele, J. Linsmeier, V. Drach, J. Fricke and R. Arens-Fischer, “Temperature-Dependent Thermal Conductivity of Porous Silicon,” Journal of Physics D, Vol. 30, No. 21, 1997, p. 2911. doi:10.1088/0022-3727/30/21/001
[11] A. G. Nassiopoulou and G. Kaltsas, “Porous Silicon as an Effective Material for Thermal Isolation on Bulk Crystalline Silicon,” Physica Status Solidi A, Vol. 182, No. 1, 2000, pp. 307-311. doi:10.1002/1521-396X(200011)182:1<307::AID-PSSA307>3.0.CO;2-#
[12] V. Lysenko, S. Perichon, B. Remaki and D. Barbier, “Thermal Isolation in Microsystems with Porous Silicon,” Sensors and Actuators A, Vol. 99, No. 1-2, 2002, pp. 13- 24. doi:10.1016/S0924-4247(01)00881-0
[13] P. Maccagnani, R. Angelucci, P. Pozzi, A. Poggi, L. Dori, G. C. Cardinali and P. Negrini, “Thick Oxidised Porous Silicon Layer as a Thermo-Insulating Membrane for High-Temperature Operating Thin- and Thick-Film Gas Sensors,” Sensors and Actuators B, Vol. 49, No. 1-2, 1998, pp. 22-29. doi:10.1016/S0925-4005(97)00337-7
[14] C. Tsamis, A. Tserepi and A. G. Nassiopoulou, “Thermal Properties of Suspended Porous Silicon Micro-Hotplates for Sensor Applications,” Sensors and Actuators B, Vol. 95, No. 1-3, 2003, pp. 78-82. doi:10.1016/S0925-4005(03)00409-X
[15] S. M. Sze, “Physics of Semiconductor Devices,” John Wiley and Sons, New York, 1981, pp. 42-43.
[16] J. J. Yon, K. Barla, R. Herino and Bomchil, “The Kinetics and Mechanism of Oxide Layer Formation from Porous Silicon Formed on P-Si Substrates,” Journal of Applied Physics, Vol. 62, No. 3, 1987, pp. 1042-1048. doi:10.1063/1.339761
[17] Y. Arita and K. Kuranari, “Thermal Behavior of Porous Silicon,” Japanese Journal of Applied Physics, Vol. 15, 1976, pp. 1655-1664. doi:10.1143/JJAP.15.1655
[18] S. Huang, X.-D. Ruan, X. Fu, H.-Y. Yang and A. Majumdar, “Transient Ballistic and Diffusive Phonon Heat Transportin Thin Films,” Journal of Heat Transfer, Vol. 115, 1993, p. 7.
[19] A. A. Joshi and A. Majumdar, “Transient Ballistic and Diffusive Phonon Heat Transportin Thin Films,” Journal of Applied Physics, Vol. 74, No. 1, 1993, pp. 31-39.
[20] G. Chen, “Nonlocal and Nonequilibrium Heat Conduction in the Vicinity of Nanoparticles,” Journal of Heat Transfer, Vol. 118, No. 3, 1996, p. 539. doi:10.1115/1.2822665
[21] L. Roussel, B. Remaki, G. Delhomme, A. Dittmar and D. Barbier, “Study of Nano-Porous Silicon with Low Thermal Conductivity as Thermal Insulating Material,” Journal of Porous Materials, Vol. 7, No. 1-3, 2000, pp. 177- 182. doi:10.1023/A:1009626518619
[22] Charles Populaire, These, lyon, 2005.
[23] A. Ould-Abbas, M. Bouchaour, M. Madani and N.-E. C. Sari, “Thermal Analysis and Morphological of Porous Silicon Oxidized or Not by Raman Spectroscopy,” Applications to Mems Thermal, Proceeding of Thermal French Congres, SFT 2006, ?le de Ré, 16-19 Mai 2006.
[24] I. H. Campbell and P. M. Fauchet, “The Effects of Microcrystal Size and Shape on the One Phonon Raman Spectra of Crystalline Semiconductors,” Solid State Communications, Vol. 58, No. 10, 1986, pp. 739-741. doi:10.1016/0038-1098(86)90513-2
[25] M. Nonnenmacher and H. K. Wickramasinghe, “Scanning Probe Microscopy of Thermal Conductivity and Subsurface Properties,” Applied Physics Letters, Vol. 61, No. 2, 1992, pp. 168-170. doi:10.1063/1.108207

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