Z. C. Deng, Q. S. Luo, X. C. Ding, L. Z. Chu, W. H. Liang, J. Z. Chen, G. S. Fu and Y. L. Wang, “Pressure Threshold and Dynamics of Nucleation for Si Nano-Crystal Grains Prepared by Pulsed Laser Ablation,” Acta Physics Sinica, Vol. 60, No. 12, 2011, pp. 126801-1-126801-5.

has been cited by the following article:

• TITLE: Determination of the Nucleation Region Location of Si Nano-Crystal Grains Prepared by Pulsed Laser Ablation through Changing Position of Substrates

  AUTHORS: Zechao Deng, Qingshan Luo, Ziqiang Hu, Xiaolong Zhang, Xuecheng Ding, Lizhi Chu, Yinglong Wang

  KEYWORDS: Nucleation Region Location; Si Nano-Crystal Grains; Pulsed Laser Ablation

  JOURNAL NAME: Journal of Surface Engineered Materials and Advanced Technology, Vol.3 No.2, April 30, 2013

  ABSTRACT: To determine the nucleation region location of Si nano-crystal grains, pulsed laser ablation of Si target is performed in Ar gas of 10 Pa at room temperature with laser fluence of 4 J/cm2, the substrates are located horizontal under ablation spot with different vertical distance. Characteristics of deposited grains are described by scanning electron microscopy, Raman scattering and X-ray diffraction spectra, the results indicate that deposition position on substrates in a certain range is relative to target surface, which changes according to different vertical distance of substrates to ablation spot. Grain size increasedat first and then decreased with addition of lateral distances to target in the range, but the integral distribution rule was independent of position of substrates. Combining with hydrodynamics model, nucleation division model, thermokinetic equation and flat parabolic motion, spatial nucleation region location of grains is obtained through numerical calculations, which is 2.7 mm-43.2 mm to target surface along the plume axis.