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Bouzgarrou, S., Ben Salem, M.M., Kalboussi, A. and Souifi, A. (2013) Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s. American Journal of Physics and Application, 1, 18-24. https://doi.org/10.11648/j.ajpa.20130101.14

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