Fateev, M.P. (2010) Theory of Hopping Transfer in Disordered Systems. Physics of the Solid State, 52, 1123-1130.
https://doi.org/10.1134/S106378341006003X
https://link.springer.com/article/10.1134/S106378341006003X

has been cited by the following article:

• TITLE: Features of the Conductivity of the Ag8Ge1-xMnxTe6 Solid Solutions

  AUTHORS: Rashad Rahimov, Aynur Gahramanova, Durdana Arasly, Almaz Halilova, Ilgar Mammadov

  KEYWORDS: Solid Solutions, X-Ray Diffraction, Hopping Conductivity, Electrical Conductivity, Impedance Spectra

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.10 No.5, May 20, 2022

  ABSTRACT: Samples of Ag8Ge1-xMnxTe6 solid solutions with different manganese content (x = 0, 0.05, 0.1, 0.2) were prepared by fusing and further pressing their powders under the pressure of 0.6 GPa. In addition of Mn atoms to the Ag8GeTe6 compound leads to compression of their lattice. All p-type samples acquire a high resistance below the transition at temperatures of 180 - 220 K. The electrical conductivity of all compositions in the range of 220 - 300 K increases due to hopping mechanism, and at temperatures T > 320 K, a semiconductor characteristic is observed. By studying impedance spectra of samples, it was established that at 80 K solid solutions behave like a homogeneous dielectric material. At high temperatures and frequencies of an external electric field, a significant role of grain boundaries in conductivity was revealed. The dielectric anomaly occurring at low frequencies is also associated with an effect that manifests itself in the grain boundary.