Article citationsMore>>

Portail, M., Zielinski, M., Chassagne, T., Chauveau, H., Roy, S. and De Mierry, P. (2009) Highly Sensitive Determination of N+ Doping Level in 3C-SiC and GaN Epilayers by Fourier Transform Infrared Spectroscopy. Materials Science and Engineering: B, 165, 42-46.
https://doi.org/10.1016/j.mseb.2009.03.014

has been cited by the following article:

Follow SCIRP
Twitter Facebook Linkedin Weibo
Contact us
+1 323-425-8868
customer@scirp.org
WhatsApp +86 18163351462(WhatsApp)
Click here to send a message to me 1655362766
Paper Publishing WeChat
Free SCIRP Newsletters
Copyright © 2006-2024 Scientific Research Publishing Inc. All Rights Reserved.
Top