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Brown, J.R., Macfarlane, D., Al-Khalidi, A., Li, X., Ternent, G., Zhou, H., Thayne I. and Wasige, E. (2014) A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS HEMT. IEEE Electron Device Letters, 35, 906-908.
https://doi.org/10.1109/LED.2014.2334394

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