Takayama, S., Tanaka, A., Sugawara, T. and Himuro, T. (2002) Effects of Oxygen Gas Annealing on Electrical Properties and Internal Stress in Indium Tin Oxide Films. Japanese Journal of Applied Physics, 41, L619-L621.
https://doi.org/10.1143/jjap.41.l619

has been cited by the following article:

• TITLE: Characterization and Structural Property of Indium Tin Oxide Thin Films

  AUTHORS: Ehsan Parsianpour, Davood Raoufi, Mojtaba Roostaei, Bahram Sohrabi, Feridoun Samavat

  KEYWORDS: ITO, Thin Film, X-Ray Reflectivity

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.7 No.2, February 20, 2017

  ABSTRACT: In this study, Indium Tin Oxide (ITO) thin films were deposited by electron beam evaporation on white glass substrates with thicknesses of about 50, 100 and 170 nm. We investigated structural properties by X-ray Diffraction (XRD) and X-ray reflectivity (XRR). The results showed that ITO thin films have a crystalline structure with a domain that increases in size with increasing thickness. For uniform electron density, as the thin film roughness increases, reflectivity curve slope also increases. Also thinner film has more fringes than thicker film. The roughness determines how quickly the reflected signal decays. XRR technique is more suitable for very thin films, approximately 20 nm and less.