Bourjot, E., Putero, M., Perrin-Pellegrino, C., Gergaud, P., Gregoire, M., Nemouchi, F. and Mangelinck, D. (2014) Kinetics Study of NiPt(10 at.%)/Si0.7Ge0.3 Solid State Reactions. Microelectronic Engineering, 120, 163-167.
http://dx.doi.org/10.1016/j.mee.2013.12.009

has been cited by the following article:

• TITLE: A Review of the Study on the Electromigration and Power Electronics

  AUTHORS: Md. Khalilur Rahman, Abul Monsur Mohammed Musa, Budrun Neher, Kawchar Ahmed Patwary, Mohammad Atiqur Rahman, Md. Shariful Islam

  KEYWORDS: Voids and Hillocks, Interconnect, Solder Joint, Thermomigration, MTF, Reliability of IC

  JOURNAL NAME: Journal of Electronics Cooling and Thermal Control, Vol.6 No.1, March 30, 2016

  ABSTRACT: Electromigration is a main challenge in the pursuit of power electronics, because physical limit to increase current density in power electronics is electromigration (EM), whereas much higher electrical current and voltage are required for power electronics packaging. So the effect of EM is an important issue in applications where high current densities are used, such as in microelectronics and related structures (e.g., Power ICs). Since the structure size of integrated circuits (ICs) decreases and the practical significance of this effect increases, the result is EM failure. On the other hand, in the next generation power electronics technology electrical current density is expected to exceed 107 A/cm2 which is another challenge. This review work has been carried out to identify the mechanism of EM damage in power electronics (e.g., pure metallization and solder joints) and also how to control this kind of damage.