Lisker, M., Hur’yeva, T., Ritterhaus, Y. and Burte, E.P. (2007) Effect of Annealing in Oxygen Atmosphere on Morphological and Electrical Properties of Iridium and Ruthenium Thin Films Prepared by Liquid Delivery MOCVD. Surface and Coatings Technology, 201, 9294-9298.
http://dx.doi.org/10.1016/j.surfcoat.2007.04.078

has been cited by the following article:

• TITLE: Enhanced Ferroelectric Properties of Multilayer SBT-BTN Thin Films for NVRAM Applications

  AUTHORS: Oleksandr Khorkhordin, Chia-Pin Yeh, Bodo Kalkofen, Edmund Burte

  KEYWORDS: Ferroelectric, SBT, BTN, MOCVD, Multilayer

  JOURNAL NAME: Journal of Crystallization Process and Technology, Vol.5 No.4, September 30, 2015

  ABSTRACT: Ferroelectric SrBi2Ta2O9-(Bi4Ti3)1-xNbxO12 (x = 0.02) (SBT-BTN) multilayer thin films with various stacking periodicity have been synthesized on Ir/Ti/SiO2/Si substrate by metal organic chemical vapor deposition technique (MOCVD). Tributylbismuth [Bi(C4H9)3], Strontium-bis[Tantal(pentanethoxy)(2-methoxyethoxid)] [Sr[Ta(OEt)5(OC2H4OMe)]2], Titanium Bis(isopropoxy)bis(1-methoxy-2-methyl-2-propoxide) [Ti(OiPr)2(mmp)2] and Niob-ethoxide [Nb(OC2H5)5] were selected as precursors. X-ray diffraction patterns show that the multilayer films annealed at 800oC consist of fully formed perovskite phase with polycrystalline structure and plate-like grains with no crack. The remanent polarization () and coercive field (Ec) are 16.2 μC/cm2 and 230 kV/cm, respectively, which is much higher, compared to pure SBT film (= 6.4 μC/cm2, Ec = 154 kV/cm). In the films prepared above 700oC, postannealing increased the capacitor shorting rate; this was attributed to oxidizing of the top iridium layer. In this paper, the dependence of composition variation around stoichiometric on ferroelectric properties in SBT-BTN multilayer films is studied.