Nagai, Y., Maeda, K., Suzuki, K. and Oyama, Y. (2014) Comparative Study of Shallow Acceptor Levels in Non-Intentionally Doped P-Type GaSe Crystals Prepared by the Bridgman and Liquid Phase Solution Growth Methods. Journal of Electronic Materials, 43, 3117-3120.

has been cited by the following article:

• TITLE: Terahertz Wave Generation via Nonlinear Parametric Process from ε-GaSe Single Crystals Grown by Liquid Phase Solution Method

  AUTHORS: Kyosuke Saito, Yuki Nagai, Kunihiko Yamamoto, Kensaku Maeda, Tadao Tanabe, Yutaka Oyama

  KEYWORDS: Terahertz Wave, Nonlinear Optics, Semiconductor Material, Liquid Phase Solution Growth

  JOURNAL NAME: Optics and Photonics Journal, Vol.4 No.8, August 22, 2014

  ABSTRACT: Terahertz (THz)-wave generation has been conducted based on difference frequency mixing (DFM) process with phonon-polariton excitation of ε-GaSe single crystals implemented with liquid-phase solution growth using the temperature difference method under controlled vapour pressure for the first time. The type-eoo phase matching condition for the DFM process at around 10 THz is satisfied by changing the incident angle into the crystal. The maximum conversion efficiency in the present DFG process is about 10-6J-1using a 0.1-mm-thick GaSe single crystal with the only ε- phase polytype, which can be greater than that of the commercially available Bridgman grown GaSe crystal including both ε- and γ-phase polytypes.