TITLE:
Experimental Demonstration of gm/ID Based Noise Analysis
AUTHORS:
Jack Ou, Pietro M. Ferreira, Jui-Chu Lee
KEYWORDS:
gm/ID Design Methodology; Noise Analysis; Flicker Noise
JOURNAL NAME:
Circuits and Systems,
Vol.5 No.4,
March
28,
2014
ABSTRACT:
Recent studies using BSIM3
models have suggested that noise depends on the transconductance-to-drain
ratio gm/ID of a
transistor. However, to the best of our knowledge, no experimental result
demonstrating gm/ID dependent noise
previously observed in simulation is available in the literature. This paper
examines the underlying principles that make it possible to analyze noise using gm/ID based noise
analysis. Qualitative discussion of normalized noise is presented along with
experimental results from a 130 nm CMOS process. A close examination of the
experimental results reveals that the device noise is width independent from 1
Hz to 10 kHz. Moreover, noise increases as gm/ID is reduced. The
experiment observation that noise is width independent makes it possible for
circuit designers to generate normalized parameters that are used to study
noise intuitively and accurately.